US 12,243,966 B2
Light-emitting device
Heng-Ying Cho, Hsinchu (TW); Li-Yu Shen, Hsinchu (TW); Chih-Hao Chen, Hsinchu (TW); and Keng-Lin Chuang, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jun. 22, 2021, as Appl. No. 17/354,922.
Claims priority of application No. 109121677 (TW), filed on Jun. 24, 2020; and application No. 110118787 (TW), filed on May 25, 2021.
Prior Publication US 2021/0408338 A1, Dec. 30, 2021
Int. Cl. H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/02 (2010.01); H01L 33/10 (2010.01); H01L 33/58 (2010.01)
CPC H01L 33/44 (2013.01) [H01L 33/10 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a semiconductor stack emitting a light with a peak wavelength; and
a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness,
wherein the first optical thickness and the second optical thickness meet any one of the following:
the first optical thickness is less than 0.25 A, and the second optical thickness is larger than or approximately equal to 0.25 A,
the first optical thickness is equal to 0.25 A, and the second optical thickness is less than or larger than 0.25 A, or
the first optical thickness is larger than 0.25 A, and the second optical thickness is less than or approximately equal to 0.25 A,
wherein the light field adjustment layer comprises a first film region and a second film region, and a first optical thickness difference between any two of the plurality of first layers located in the first film region is larger than the first optical thickness difference between any two of the plurality of first layers located in the second film region,
wherein the first film region is closer to the semiconductor stack than the second film region to the semiconductor stack.