US 12,243,965 B2
Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
Tetsuhiko Inazu, Hakusan Ishikawa (JP); and Noritaka Niwa, Hakusan Ishikawa (JP)
Assigned to NIKKISO CO., LTD., Tokyo (JP)
Filed by NIKKISO CO., LTD., Tokyo (JP)
Filed on Jul. 16, 2021, as Appl. No. 17/378,106.
Claims priority of application No. 2020-135287 (JP), filed on Aug. 7, 2020.
Prior Publication US 2022/0045243 A1, Feb. 10, 2022
Int. Cl. H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/405 (2013.01) [H01L 33/44 (2013.01); H01L 33/32 (2013.01); H01L 2933/0058 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting element comprising:
an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material;
an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material;
a p-type semiconductor layer provided on the active layer; and
a p-side contact electrode that includes an Rh layer in contact with an upper surface of the p-type semiconductor layer and having a thickness of 10 nm or smaller and an Al layer in contact with an upper surface of the Rh layer and having a thickness of 20 nm or larger;
wherein the p-side contact electrode is annealed such that a reflectivity of the p-side contact electrode for ultraviolet light incident from the p-type semiconductor layer and having a wavelength of 280 nm is 70% or higher.