US 12,243,959 B2
Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device
Harald König, Bernhardswald (DE); Jens Ebbecke, Rohr in Niederbayern (DE); Alfred Lell, Maxhuette-Haidhof (DE); Sven Gerhard, Alteglofsheim (DE); and Clemens Vierheilig, Tegernheim (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Filed on Apr. 13, 2021, as Appl. No. 17/229,051.
Application 17/229,051 is a division of application No. 16/409,527, filed on May 10, 2019, granted, now 11,005,005.
Claims priority of application No. 102018111319.6 (DE), filed on May 11, 2018.
Prior Publication US 2021/0234068 A1, Jul. 29, 2021
Int. Cl. H01S 5/02 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/26 (2010.01)
CPC H01L 33/08 (2013.01) [H01L 33/007 (2013.01); H01L 33/26 (2013.01); H01S 5/0203 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor device comprising:
a semiconductor body comprising:
a first region of a first conductive type;
an active region configured to generate electromagnetic radiation;
a second region of a second conductive type;
a coupling-out surface configured to couple-out the electromagnetic radiation,
wherein the first region, the active region and the second region are arranged along a stacking direction,
wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction,
wherein the coupling-out surface is arranged plane-parallel to the rear surface,
wherein the first region at the coupling-out surface has at least one step in the longitudinal direction; and
a plurality of recesses arranged directly in the semiconductor body and arranged on the rear surface and the coupling-out surface forming a mirror and a further mirror,
wherein each of the recesses is provided with a passivation layer and a mirror layer.