| CPC H01L 33/0095 (2013.01) [H01L 33/007 (2013.01); H01L 33/22 (2013.01); H01L 33/507 (2013.01); H01L 2933/0041 (2013.01)] | 19 Claims |

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1. A method for manufacturing a light-emitting element, the method comprising:
forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a first region and a second region, the first region comprises a plurality of protrusions, and an arithmetic average roughness of a surface of the second region is smaller than an arithmetic average roughness of a surface of the first region;
dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from the semiconductor structure in the exposed region;
bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer;
after the bonding of the light-transmitting body to the second surface, forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from a first surface side;
after the forming of the plurality of modified regions, removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and
singulating the bonded body along the modified regions.
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