US 12,243,946 B2
Integrated circuit devices including a common gate electrode and methods of forming the same
Sooyoung Park, Clifton Park, NY (US); Seunghyun Song, Albany, NY (US); Byounghak Hong, Albany, NY (US); and Seungchan Yun, Waterford, NY (US)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 19, 2021, as Appl. No. 17/504,755.
Claims priority of provisional application 63/232,336, filed on Aug. 12, 2021.
Prior Publication US 2023/0049816 A1, Feb. 16, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 29/0669 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a first channel layer comprising a first surface;
a second channel layer that is spaced apart from the first channel layer in a first direction and comprises a second surface, wherein the first surface and the second surface are spaced apart from each other in the first direction and face opposite directions;
a first gate electrode, wherein the first channel layer is in the first gate electrode, and the first gate electrode is absent from the first surface of the first channel layer; and
a second gate electrode, wherein the second channel layer is in the second gate electrode, and the second gate electrode is absent from the second surface of the second channel layer.