US 12,243,945 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Haruyuki Baba, Isehara (JP); Naoki Okuno, Yamato (JP); Yoshihiro Komatsu, Ebina (JP); and Toshikazu Ohno, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Mar. 28, 2024, as Appl. No. 18/619,261.
Application 18/619,261 is a continuation of application No. 17/889,597, filed on Aug. 17, 2022, granted, now 11,955,562.
Application 17/889,597 is a continuation of application No. 17/256,341, granted, now 11,424,369, issued on Aug. 23, 2022, previously published as PCT/IB2019/055318, filed on Jun. 25, 2019.
Claims priority of application No. 2018-129050 (JP), filed on Jul. 6, 2018; application No. 2018-132300 (JP), filed on Jul. 12, 2018; application No. 2018-156319 (JP), filed on Aug. 23, 2018; application No. 2018-168236 (JP), filed on Sep. 7, 2018; application No. 2018-224773 (JP), filed on Nov. 30, 2018; application No. 2019-030032 (JP), filed on Feb. 22, 2019; and application No. 2019-042602 (JP), filed on Mar. 8, 2019.
Prior Publication US 2024/0387741 A1, Nov. 21, 2024
Int. Cl. H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/4966 (2013.01); H01L 29/517 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulator;
a second insulator over the first insulator;
a first oxide over the second insulator;
a second oxide and a third oxide over the first oxide; and
a first conductor over the second oxide;
a second conductor over the third oxide;
a fourth oxide over the first oxide;
a third insulator over the fourth oxide;
a third conductor over the third insulator; and
a fourth insulator over the first conductor and the second conductor,
wherein the fourth oxide is in contact with a top surface of the first oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the second oxide, and a side surface of the third oxide,
wherein the fourth oxide is in contact with a side surface of an opening portion provided in the fourth insulator,
wherein the third conductor is provided in the opening portion,
wherein the second insulator comprises silicon and oxygen,
wherein the first oxide comprises indium and oxygen,
wherein the second oxide and the third oxide each comprise indium, gallium, and zinc,
wherein the third insulator comprises a first insulating layer and a second insulating layer over the first insulating layer,
wherein the fourth oxide comprises aluminum,
wherein the first insulating layer comprises silicon oxide, and
wherein the second insulating layer comprises hafnium oxide.