US 12,243,942 B2
Vertical oxide-semiconductor transistor and method of manufacturing the same
Wen-Yueh Chang, Hsinchu (TW)
Assigned to Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed by Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/839,474.
Claims priority of application No. 111116914 (TW), filed on May 5, 2022.
Prior Publication US 2023/0361218 A1, Nov. 9, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/6656 (2013.01); H01L 29/66742 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A vertical oxide-semiconductor transistor, comprising:
an insulating substrate;
a source in said insulating substrate;
a gate on said insulating substrate, wherein said gate surrounds said source and forms a recess on said source;
an inner spacer on an inner sidewall of said gate in said recess;
an oxide-semiconductor layer on said inner spacer and said source and directly contacting said source;
a filling oxide on said oxide-semiconductor layer and filling in said recess; and
a drain on said oxide-semiconductor layer and said filling oxide and directly contacting said oxide-semiconductor layer, wherein said drain completely covers said source and partially overlaps said gate.