US 12,243,940 B2
Methods of forming air spacers in semiconductor devices
Chao-Hsun Wang, Taoyuan County (TW); Chen-Ming Lee, Taoyuan County (TW); Kuo-Yi Chao, Hsinchu (TW); Mei-Yun Wang, Hsin-Chu (TW); Pei-Yu Chou, Hsinchu County (TW); and Kuo-Ju Chen, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 16, 2023, as Appl. No. 18/336,561.
Application 17/576,725 is a division of application No. 16/572,320, filed on Sep. 16, 2019, granted, now 11,227,950, issued on Jan. 18, 2022.
Application 18/336,561 is a continuation of application No. 17/576,725, filed on Jan. 14, 2022, granted, now 11,682,729.
Prior Publication US 2023/0327021 A1, Oct. 12, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/02532 (2013.01); H01L 21/76224 (2013.01); H01L 21/764 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin structure disposed on a substrate;
a source/drain feature disposed on the fin structure;
a first etch stop layer disposed over the fin structure;
a second etch stop layer disposed over the fin structure and spaced apart from the first etch stop layer;
a source/drain contact disposed on the source/drain feature and interfacing with at least one of the first and second etch stop layers; and
an air gap disposed along the source/drain contact such that the source/drain feature and at least one of the first and second etch stop layers are exposed to the air gap.