US 12,243,938 B2
Semiconductor device and method for manufacturing the same
Qiyue Zhao, Suzhou (CN); and Yu Shi, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Appl. No. 17/623,593
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
PCT Filed Aug. 11, 2021, PCT No. PCT/CN2021/112113
§ 371(c)(1), (2) Date Dec. 28, 2021,
PCT Pub. No. WO2023/015495, PCT Pub. Date Feb. 16, 2023.
Prior Publication US 2024/0038886 A1, Feb. 1, 2024
Int. Cl. H01L 29/778 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7787 (2013.01) [H01L 29/2003 (2013.01); H01L 29/404 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first nitride-based semiconductor layer disposed above a substrate;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, wherein the first and second nitride-based semiconductor layers collectively have an active portion and an electrically isolating portion that is non-semi-conducting and surrounds the active portion to form at least two interfaces extending along a first direction and spaced apart from each other by the active portion;
a first gate electrode disposed above the second nitride-based semiconductor layer and extending along a second direction different than the first direction and across the two interfaces such that the first gate electrode extends to the electrically isolating portion;
a first source/drain (S/D) electrode disposed above the second nitride-based semiconductor layer and parallel with the first gate electrode; and
a first field plate disposed above the second nitride-based semiconductor layer and the first gate electrode and extending along the second direction and across the two interfaces such that the field plate extends to the electrically isolating portion, and overlaps with the first gate electrode near the interfaces;
wherein the first field plate has two opposite end portions directly over the gate electrode and spaced apart by a first distance which is greater than a second distance from one of the two interfaces to another one of the two interfaces;
wherein the first field plate has a central portion between the end portions extending along the first direction with respect to the central portion;
wherein the central portion is within the active portion and is narrower than the end portions.