US 12,243,937 B2
Bidirectional device provided with a stack of two high electron mobility transistors connected head-to-tail
Matthieu Nongaillard, Grenoble (FR); and Thomas Oheix, Grenoble (FR)
Assigned to STMicroelectronics France, Montrouge (FR); and STMicroelectronics International N.V., Geneva (CH)
Filed by STMicroelectronics France, Montrouge (FR); and STMicroelectronics International N.V., Geneva (CH)
Filed on Apr. 1, 2022, as Appl. No. 17/711,597.
Claims priority of application No. 2103832 (FR), filed on Apr. 14, 2021.
Prior Publication US 2022/0336651 A1, Oct. 20, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 27/12 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 27/12 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/872 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first high electron mobility (HEMT) transistor, the first HEMT transistor including a first stack of semiconductor layers on a first surface of an insulating layer, the first stack of semiconductor layers including, from the first surface of the insulating layer, a first barrier layer and a first channel layer, and the first HEMT transistor including a first source electrode, a first drain electrode, and a first gate electrode; and
a second HEMT transistor, the second HEMT transistor including a second stack of semiconductor layers on a second surface of the insulating layer that is opposite to the first surface, the second stack of semiconductor layers including, from the second surface of the insulating layer, a second barrier layer and a second channel layer, and the second HEMT transistor including a second source electrode, a second drain electrode, and a second gate electrode, the second source electrode coupled to the first drain electrode, and the second drain electrode coupled to the first source electrode,
wherein the first source electrode and the second drain electrode is a same conductive structure.