US 12,243,936 B2
AIN channel heterostructure field effect transistor
Eduardo M. Chumbes, Andover, MA (US)
Assigned to Raytheon Company, Arlington, VA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Dec. 28, 2021, as Appl. No. 17/646,178.
Prior Publication US 2023/0207677 A1, Jun. 29, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/04 (2013.01); H01L 29/2003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a polar oxide layer epitaxially and heterogeneously integrated above a wurtzite single-crystal Group III-Nitride layer comprising AlN;
a source electrode disposed over a conductive region in the polar oxide layer and partway into the AlN;
a drain electrode disposed over another conductive region in the polar oxide layer and partway into the AlN; and
a gate electrode disposed between the source electrode and the drain electrode on top of the polar oxide layer.