| CPC H01L 29/6684 (2013.01) [H01L 21/0228 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/78391 (2014.09)] | 20 Claims |
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1. A method of forming a semiconductor device, the method comprising:
forming a ferroelectric dielectric layer over a substrate, forming the ferroelectric dielectric layer comprising:
forming an alternating sequence of dielectric layers, forming the alternating sequence of dielectric layers comprising:
depositing a first dielectric layer over the substrate, wherein at least a part of the first dielectric layer is amorphous; and
forming a plurality of pairs of dielectric layers over the first dielectric layer, forming each pair of layers comprising:
depositing a dopant-source layer comprising dopants; and
depositing a second high-k dielectric layer over the dopant-source layer, wherein at least a part of the second high-k dielectric layer is amorphous; and
after forming the alternating sequence of dielectric layers, performing a first anneal to transform the alternating sequence of dielectric layers to the ferroelectric dielectric layer, wherein an upper surface of an uppermost layer of the second high-k dielectric layer is exposed during the first anneal.
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