US 12,243,927 B2
Semiconductor device having nickel oxide film on gate electrode
Tomohiro Yoshida, Kanagawa (JP)
Assigned to SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa (JP)
Filed by SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/652,749.
Claims priority of application No. 2021-040305 (JP), filed on Mar. 12, 2021.
Prior Publication US 2022/0293763 A1, Sep. 15, 2022
Int. Cl. H01L 29/47 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/475 (2013.01) [H01L 21/02244 (2013.01); H01L 21/28581 (2013.01); H01L 29/401 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor layer;
an insulating film disposed on the semiconductor layer and having an opening;
a gate electrode connected to the semiconductor layer through the opening;
a protection film that covers the gate electrode; and
a Ni oxide film,
the insulating film having
a first surface facing the semiconductor layer, and
a second surface opposite to the first surface, the gate electrode having
a third surface spaced apart from the second surface and facing the second surface, and
a fourth surface connecting the second surface and the third surface, the gate electrode including
a Ni film that forms the third surface and the fourth surface,
wherein the Ni oxide film covers the Ni film on the third surface and the fourth surface,
wherein the protection film covers the third surface and the fourth surface such that the protection film is laid over the Ni oxide film, and,
wherein a space is located between the second surface and a portion of the protection film, the portion covering the third surface.