US 12,243,917 B2
Producing an ohmic contact and electronic component with ohmic contact
Alexander Pawlis, Alsdorf (DE); Johanna Janßen, Aachen (DE); Benjamin Bennemann, Jülich (DE); and Christoph Krause, Jülich (DE)
Assigned to Forschungszentrum Jülich GmbH, (DE)
Appl. No. 17/603,612
Filed by Forschungszentrum Jülich GmbH, Jülich (DE)
PCT Filed Apr. 2, 2020, PCT No. PCT/EP2020/059394
§ 371(c)(1), (2) Date Oct. 14, 2021,
PCT Pub. No. WO2020/212154, PCT Pub. Date Oct. 22, 2020.
Claims priority of application No. 102019205376.9 (DE), filed on Apr. 15, 2019.
Prior Publication US 2022/0216306 A1, Jul. 7, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/443 (2006.01); H01L 29/267 (2006.01)
CPC H01L 29/267 (2013.01) [H01L 21/02477 (2013.01); H01L 21/02557 (2013.01); H01L 21/0256 (2013.01); H01L 21/02568 (2013.01); H01L 21/02642 (2013.01); H01L 21/28575 (2013.01); H01L 21/443 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for producing an ohmic contact for an electronic part, wherein a layer consisting of a semiconductor is applied indirectly or directly to a substrate, wherein a surface to be contacted of the applied semiconductor is wet-chemically etched, the wet-chemically etched surface is rinsed with radicals, after rinsing with radicals, the surface to be contacted of the semiconductor layer is processed with a metal vapor, wherein the metal vapor includes a metal that is also present in the semiconductor so as to fill metal defects in the semiconductor with the corresponding metal from the metal vapor, and a semiconductor is applied to the surface processed with the metal vapor.