US 12,243,916 B2
Polarization-engineered heterogeneous semiconductor heterostructures
Karl D. Hobart, Alexandria, VA (US); Marko J. Tadjer, Vienna, VA (US); Michael A. Mastro, Fairfax, VA (US); Mark Goorsky, Valencia, CA (US); Asif Khan, Columbia, SC (US); and Samuel Graham, Jr., Lithonia, GA (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Apr. 28, 2022, as Appl. No. 17/731,297.
Prior Publication US 2023/0352541 A1, Nov. 2, 2023
Int. Cl. H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for making a polarization-engineered semiconductor device, the method including the steps of:
providing a first semiconductor material layer having a corresponding first polarity, first crystallographic orientation, and first spontaneous polarization constant indicative of a spontaneous polarization of the first semiconductor material layer;
providing a second semiconductor material layer different from the first semiconductor material layer, the second semiconductor material layer having a corresponding second polarity, second crystallographic orientation, and second spontaneous polarization constant indicative of a spontaneous polarization of the second semiconductor material layer; and
directly bonding a bonding surface of the first semiconductor material layer to a bonding surface of the second semiconductor material layer without use of any interfacial bonding materials;
wherein a difference between the spontaneous polarization of the first semiconductor material layer and the spontaneous polarization of the second semiconductor material layer is indicative of the formation of a corresponding two-dimensional electron gas (2DEG) or a two dimensional hole gas (2DHG) at an interface between the bonding surface of the first semiconductor material layer and the bonding surface of the second semiconductor material layer; and
wherein the first semiconductor material layer, the second semiconductor material layer, a crystallographic orientation of the bonding surface of the first semiconductor material layer relative to a direction of the polarity of the first semiconductor material layer, and a crystallographic orientation of the bonding surface of the second semiconductor material layer relative to a direction of the polarity of the second semiconductor material layer are selected to produce a predetermined 2DEG or 2DHG at the interface between the bonding surface of the first semiconductor material layer and the bonding surface of the second semiconductor material layer.