US 12,243,915 B2
Graphene wrap-around contact
Mrunal Abhijith Khaderbad, Hsinchu (TW); and Wei-Yen Woon, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 14, 2021, as Appl. No. 17/550,759.
Claims priority of provisional application 63/157,540, filed on Mar. 5, 2021.
Prior Publication US 2022/0285515 A1, Sep. 8, 2022
Int. Cl. H01L 29/16 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/1606 (2013.01) [H01L 21/76843 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 29/42392 (2013.01); H01L 29/66045 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
forming a fin structure with an epitaxial region on a substrate;
forming a first graphene film covering a top surface and sidewalls of the epitaxial region;
forming a metal contact above the epitaxial region; and
forming a second graphene film in contact with the first graphene film and covering a bottom surface and sidewalls of the metal contact.