US 12,243,914 B2
Different height cell subregions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
Jung-Chan Yang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); Lee-Chung Lu, Hsinchu (TW); Ting-Wei Chiang, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/815,087.
Application 17/205,670 is a division of application No. 16/204,474, filed on Nov. 29, 2018, granted, now 10,971,586, issued on Apr. 6, 2021.
Application 17/815,087 is a continuation of application No. 17/205,670, filed on Mar. 18, 2021, granted, now 11,756,999.
Claims priority of provisional application 62/691,600, filed on Jun. 28, 2018.
Prior Publication US 2022/0367629 A1, Nov. 17, 2022
Int. Cl. H01L 29/06 (2006.01); G06F 30/392 (2020.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0696 (2013.01) [G06F 30/392 (2020.01); H01L 21/0337 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
20. A semiconductor device comprising:
a first cell region having a first height; and
a second cell region adjacent to the first cell region, wherein:
a first portion of the first cell region includes a first active region having a first conductivity type, the first active region extending in a first direction and having a second height less than the first height,
a second portion of the first cell region includes a second active region having a second conductivity type, the second active region extending in the first direction and having a third height less than the second height,
a third portion of the first cell region includes a third active region extending in the first direction having the second conductivity type and the third height,
the first, second, and third heights are determined in a second direction which is substantially perpendicular to the first direction,
the first portion is a central portion of the first cell region, and is between the second portion and the third portion relative to the second direction,
the first cell region is immediately adjacent to the second cell region in the second direction,
the third portion faces a second conductivity type active region in the second cell region,
the first active region has a first number of fins, and
the second active region and the third active region each have a same second number of fins, different from the first number of fins.