US 12,243,909 B2
Multilayer capacitor electrode
Hsiang-Ku Shen, Hsinchu (TW); and Dian-Hau Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 22, 2023, as Appl. No. 18/395,110.
Application 18/395,110 is a continuation of application No. 17/811,398, filed on Jul. 8, 2022, granted, now 11,855,132.
Application 17/811,398 is a continuation of application No. 16/888,429, filed on May 29, 2020, granted, now 11,424,319, issued on Aug. 23, 2022.
Prior Publication US 2024/0128312 A1, Apr. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H01L 28/91 (2013.01) [H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 28/75 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01); H10B 12/03 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an etch stop layer;
a first dielectric layer on the etch stop layer;
a contact feature disposed completely in the first dielectric layer and on the etch stop layer;
a first passivation layer over the contact feature;
a bottom conductor plate layer over the first passivation layer, the bottom conductor plate layer comprising a first plurality of sublayers;
a second dielectric layer over the bottom conductor plate layer;
a middle conductor plate layer over the second dielectric layer, the middle conductor plate layer comprising a second plurality of sublayers;
a third dielectric layer over the middle conductor plate layer;
a top conductor plate layer over the third dielectric layer, the top conductor plate layer comprising a third plurality of sublayers;
a second passivation layer over the top conductor plate layer;
a first conductive feature extending through and electrically coupled to the middle conductor plate layer and the top conductor plate layer;
a second conductive feature extending through and electrically coupled to the top conductor plate layer and the middle conductor plate layer; and
a third conductive feature extending through and electrically coupled to the top conductor plate layer and the bottom conductor plate layer.