US 12,243,906 B2
Low resistance current spreading to n-contacts of micro-LED array
Stephan Lutgen, Dresden (DE); Markus Broell, Unterhaching (DE); Thomas Lauermann, Berlin (DE); Berthold Hahn, Cork (IE); Christophe Antoine Hurni, Seattle, WA (US); and Guillaume Lheureux, Cork (IE)
Assigned to META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Nov. 12, 2021, as Appl. No. 17/525,442.
Claims priority of provisional application 63/119,412, filed on Nov. 30, 2020.
Prior Publication US 2022/0173159 A1, Jun. 2, 2022
Int. Cl. H01L 27/15 (2006.01); G02B 27/01 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/62 (2010.01)
CPC H01L 27/156 (2013.01) [G02B 27/0101 (2013.01); H01L 33/005 (2013.01); H01L 33/20 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A light source comprising:
an epitaxial layer stack including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the epitaxial layer stack including a two-dimensional (2-D) array of mesa structures formed therein;
an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures;
a metal layer surrounding each individual mesa structure of the 2-D array of mesa structures; and
a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.