US 12,243,905 B2
Method of forming metal grid, backside-illuminated image sensor and method of forming the same
Guoliang Ye, Hubei (CN)
Assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed by WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed on Dec. 30, 2021, as Appl. No. 17/566,386.
Claims priority of application No. 202110902521.6 (CN), filed on Aug. 6, 2021.
Prior Publication US 2023/0040031 A1, Feb. 9, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14685 (2013.01) [H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming a metal grid, the method comprising:
providing a substrate in which a conductive component and a conductive pillar are formed, the substrate having a surface in which a recess is formed, the conductive pillar received in a through-hole extending from a bottom surface of the recess to a top surface of the conductive component so as to come into electrical connection with the conductive component;
successively depositing an etch stop layer and a metal material layer in geometric conformity over surfaces of the substrate, the conductive pillar and the recess;
forming a bonding pad on the metal material layer in the recess and depositing a dielectric cap layer over the bonding pad and the metal material layer; and
etching the dielectric cap layer, the metal material layer and the etch stop layer that are peripheral to the recess, to form the metal grid.