US 12,243,892 B2
Image sensors including a photodiode
Sanghoon Kim, Seongnam-si (KR); Jinju Jeon, Suwon-si (KR); and Heegeun Jeong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 7, 2022, as Appl. No. 17/570,884.
Claims priority of application No. 10-2021-0004240 (KR), filed on Jan. 12, 2021.
Prior Publication US 2022/0223636 A1, Jul. 14, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 25/633 (2023.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 25/633 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a semiconductor substrate having a first surface and a second surface;
a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and comprises a conductive layer; and
a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure comprises a conductive liner electrically connected to the conductive layer,
wherein a negative bias is applied to the conductive layer and the conductive liner.