US 12,243,891 B2
Image sensor and method of manufacturing the same
Kook Tae Kim, Hwaseong-si (KR); Miseon Park, Hwaseong-si (KR); and Soojin Hong, Guri-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 4, 2021, as Appl. No. 17/518,756.
Claims priority of application No. 10-2020-0164117 (KR), filed on Nov. 30, 2020.
Prior Publication US 2022/0173143 A1, Jun. 2, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a substrate comprising:
a first surface;
a second surface opposite to the first surface; and
unit pixels;
a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other;
transfer gates disposed on the first surface, wherein the transfer gates are respectively disposed in the unit pixels; and
color filters and a micro lens array layer that are sequentially stacked on the second surface,
wherein the deep device isolation portion comprises:
a first conductive pattern extending from the first surface toward the second surface; and
a second conductive pattern extending from the second surface toward the first conductive pattern, and
wherein the first conductive pattern directly contacts the second conductive pattern.