US 12,243,890 B2
Semiconductor device structure and manufacturing process thereof
Yi-Ping Pan, Taipei (TW); and Hung-Jen Hsu, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 17, 2022, as Appl. No. 17/577,020.
Application 17/577,020 is a continuation of application No. 16/595,502, filed on Oct. 8, 2019, granted, now 11,227,887.
Application 16/595,502 is a continuation of application No. 15/256,628, filed on Sep. 5, 2016, granted, now 10,475,835, issued on Nov. 12, 2019.
Prior Publication US 2022/0139988 A1, May 5, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14625 (2013.01) [H01L 27/1462 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure for sensing an incident light, comprising:
a substrate having a device embedded therein;
a first passivation layer, disposed on the substrate, wherein the first passivation layer has a first side and a second side opposite to the first side, the first side of the first passivation layer comprises a plurality of first microstructures disposed on the substrate, and the second side of the first passivation layer is a continuous flat plane, wherein each of the plurality of first microstructures has a cross-section in a shape of a triangle, trapezoid or arc;
a second passivation layer, disposed on the substrate, wherein the first passivation layer is sandwiched between the substrate and the second passivation layer, wherein there is a cavity confined by the first passivation layer and the second passivation layer; and
a wiring structure, disposed on the substrate and electrically coupled to the device, wherein the substrate is located between the first passivation layer and the wiring structure.