| CPC H01L 27/14616 (2013.01) [H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/14663 (2013.01); H01L 27/14665 (2013.01); H01L 27/14692 (2013.01); H01L 27/14696 (2013.01); H01L 29/7869 (2013.01); H01L 27/14627 (2013.01); H01L 27/14641 (2013.01)] | 6 Claims |

|
1. An imaging device comprising:
a plurality of pixels arranged in a matrix; and
a first transistor,
each of the plurality of pixels comprising:
a photoelectric conversion element;
a second transistor;
a third transistor;
a first wiring; and
a second wiring,
wherein one electrode of the photoelectric conversion element is electrically connected to the first wiring,
wherein the other electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,
wherein a gate of the second transistor is electrically connected to the second wiring,
wherein among the plurality of pixels, the other of the source and the drain of the second transistor in a pixel in an nth row and an mth column and the other of the source and the drain of the second transistor in a pixel in a (n+1)-th row and the mth column are electrically connected to a gate of the first transistor, and
wherein a maximum value of a potential supplied to the second wiring is smaller than a potential supplied to the first wiring.
|