US 12,243,872 B2
Semiconductor device structure and methods of forming the same
Chen-Huang Huang, Hsinchu (TW); Yu-Ling Cheng, Tainan (TW); Shun-Hui Yang, Taoyuan (TW); An Chyi Wei, Hsinchu (TW); Chia-Jen Chen, Hsinchu (TW); Shang-Shuo Huang, Kaohsiung (TW); Chia-I Lin, Taipei (TW); and Chih-Chang Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 15, 2022, as Appl. No. 17/672,216.
Prior Publication US 2023/0260993 A1, Aug. 17, 2023
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 27/088 (2013.01) [H01L 21/823481 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming first and second fins from a substrate, wherein first fin includes a first plurality of semiconductor layers and the second fin includes a second plurality of semiconductor layers;
forming first and second dielectric features, wherein the first dielectric feature is disposed adjacent the first fin, the second dielectric feature is disposed between the first and second fins, the first dielectric feature comprises a first dielectric material, and the second dielectric feature comprises a second dielectric material;
forming a sacrificial gate electrode layer over the first fin, the second fin, the first dielectric feature, and the second dielectric feature;
recessing the sacrificial gate electrode layer to a level above a top surface of the second dielectric material;
forming a mask structure over the first dielectric feature;
removing a portion of the sacrificial gate electrode layer disposed on the second dielectric material to expose the second dielectric material;
removing the mask structure; and
recessing the second dielectric material.