US 12,243,870 B2
Reverse-conducting semiconductor device
Toshiyuki Matsui, Matsumoto (JP); Tatsuya Naito, Matsumoto (JP); and Kazuki Kamimura, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on May 17, 2022, as Appl. No. 17/746,925.
Claims priority of application No. 2021-123960 (JP), filed on Jul. 29, 2021.
Prior Publication US 2023/0036039 A1, Feb. 2, 2023
Int. Cl. H01L 29/08 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01)
CPC H01L 27/0664 (2013.01) [H01L 29/0661 (2013.01); H01L 29/0804 (2013.01); H01L 29/32 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate having a diode portion, wherein
the diode portion includes,
an anode region which is provided on a front surface of the semiconductor substrate and is of a second conductivity type, and
a trench portion provided so as to extend in a predetermined extending direction on the front surface of the semiconductor substrate,
a trench contact portion provided on the front surface of the semiconductor substrate, and
a plug region which is provided at a lower end of the trench contact portion and is of a second conductivity type, and which has a doping concentration higher than that of the anode region, wherein
ones of the plug region are provided separately from each other along the extending direction; and
a transistor portion having an emitter region which is provided on the front surface of the semiconductor substrate; wherein
the lower end of the trench contact portion is positioned deeper than a lower end of the emitter region.