US 12,243,867 B2
Integrated circuit device and method
Chien-Ying Chen, Hsinchu (TW); Lee-Chung Lu, Hsinchu (TW); Li-Chun Tien, Hsinchu (TW); and Ta-Pen Guo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 1, 2023, as Appl. No. 18/362,960.
Application 18/362,960 is a continuation of application No. 17/740,328, filed on May 9, 2022, granted, now 11,776,949.
Application 17/740,328 is a continuation of application No. 16/936,175, filed on Jul. 22, 2020, granted, now 11,355,488, issued on Jun. 7, 2022.
Application 16/936,175 is a continuation of application No. 16/204,678, filed on Nov. 29, 2018, granted, now 10,741,540, issued on Aug. 11, 2020.
Claims priority of provisional application 62/691,610, filed on Jun. 29, 2018.
Prior Publication US 2023/0378159 A1, Nov. 23, 2023
Int. Cl. H01L 27/02 (2006.01); G06F 30/392 (2020.01); H01L 27/092 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/392 (2020.01); H01L 27/092 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device comprising:
first through third active areas extending in a first direction; and
a first gate structure extending in a second direction perpendicular to the first direction and overlying each of the first through third active areas,
wherein
each of the first through third active areas comprises:
a first portion adjacent to the first gate structure in the first direction; and
a second portion adjacent to the first portion and comprising an endpoint of the corresponding active area,
the first active area is positioned between the second and third active areas and comprises the endpoint positioned under the first gate structure along a third direction perpendicular to each of the first and second directions, and
each of the second and third active areas comprises the endpoint positioned away from the first gate structure in a fourth direction opposite to the first direction.