US 12,243,848 B2
Methods and systems for improving fusion bonding
Hong-Ta Kuo, Hsinchu (TW); Yen Hao Huang, Hsinchu (TW); I-Shi Wang, Taipei (TW); Ming-Yi Shen, Miaoli (TW); Tzu-Ping Yang, Hsinchu (TW); Hsing-Yu Wang, Hsinchu (TW); Huang-Liang Lin, Hsinchu (TW); Yin-Tung Chou, Hsinchu (TW); Yuan-Hsin Chi, Taichung (TW); and Sheng-Yuan Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 8, 2022, as Appl. No. 17/666,933.
Claims priority of provisional application 63/188,852, filed on May 14, 2021.
Prior Publication US 2022/0367405 A1, Nov. 17, 2022
Int. Cl. H01L 23/00 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01)
CPC H01L 24/80 (2013.01) [H01J 37/32715 (2013.01); H01J 37/32807 (2013.01); H01L 21/68742 (2013.01); H01L 21/68757 (2013.01); H01L 24/74 (2013.01); H01L 2224/80031 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80908 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for improving fusion bond quality between a first substrate and a second substrate, comprising:
plasma treating a dummy silicon wafer in a plasma treatment tool;
measuring a residual voltage on the dummy silicon wafer;
replacing at least one cushion on a loading pin of a wafer support pedestal of the plasma treatment tool with a new cushion if the measured residual voltage is greater than about +100 volts; and
plasma treating a first substrate using the plasma treatment tool; and
fusion bonding the first substrate to a second substrate.