US 12,243,839 B2
Bonded semiconductor structure utilizing concave/convex profile design for bonding pads
Chung-Sung Chiang, Kaohsiung (TW); Chia-Wei Liu, Tainan (TW); Yu-Ruei Chen, New Taipei (TW); and Yu-Hsiang Lin, New Taipei (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Feb. 2, 2024, as Appl. No. 18/430,670.
Application 18/119,266 is a division of application No. 17/406,091, filed on Aug. 19, 2021, granted, now 11,640,949, issued on May 2, 2023.
Application 18/430,670 is a continuation of application No. 18/119,266, filed on Mar. 8, 2023, granted, now 11,935,854.
Claims priority of application No. 202110776523.5 (CN), filed on Jul. 9, 2021.
Prior Publication US 2024/0170423 A1, May 23, 2024
Int. Cl. H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/488 (2006.01); H01L 23/532 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/06 (2013.01) [H01L 23/488 (2013.01); H01L 23/53228 (2013.01); H01L 25/0655 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A bonded semiconductor structure, comprising:
a first device wafer, comprising:
a first dielectric layer;
a first bonding pad disposed in the first dielectric layer; and
a first bonding layer on the first dielectric layer; and
a second device wafer, comprising:
a second dielectric layer;
a second bonding layer on the second dielectric layer; and
a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer, wherein a conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer comprise a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface, wherein a height of the step-height is larger than a thickness of the first bonding layer.