US 12,243,837 B2
Semiconductor device and method
Ting-Li Yang, Tainan (TW); Po-Hao Tsai, Zhongli (TW); Ming-Da Cheng, Taoyuan (TW); Yung-Han Chuang, Tainan (TW); and Hsueh-Sheng Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/231,032.
Application 18/231,032 is a division of application No. 17/342,869, filed on Jun. 9, 2021, granted, now 11,855,017.
Claims priority of provisional application 63/137,362, filed on Jan. 14, 2021.
Prior Publication US 2023/0411318 A1, Dec. 21, 2023
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14051 (2013.01); H01L 2924/3841 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first redistribution line and a second redistribution line over a semiconductor substrate;
a first passivation layer over the first redistribution line and the second redistribution line;
a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, wherein a top surface of the first UBM structure is concave; and
a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, wherein an entirety of a top surface of the second UBM structure is flat or convex.