US 12,243,836 B2
Semiconductor device
Shunji Yoshimi, Nagaokakyo (JP); Satoshi Goto, Nagaokakyo (JP); and Mikiko Fukasawa, Nagaokakyo (JP)
Assigned to Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed on Dec. 13, 2021, as Appl. No. 17/548,679.
Claims priority of application No. 2020-210055 (JP), filed on Dec. 18, 2020.
Prior Publication US 2022/0199557 A1, Jun. 23, 2022
Int. Cl. H03F 3/04 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 25/065 (2023.01); H03F 1/02 (2006.01); H03F 3/14 (2006.01); H03F 3/19 (2006.01); H03F 1/56 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 23/49822 (2013.01); H01L 25/0657 (2013.01); H03F 1/0211 (2013.01); H03F 3/19 (2013.01); H01L 2223/6655 (2013.01); H01L 2225/06517 (2013.01); H03F 1/56 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first member having a first surface and including a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan;
a second member joined to the first surface of the first member in surface contact with the first surface, the second member including a plurality of first transistors that are connected in parallel to each other and configured as a first amplifier circuit, and the first transistors being disposed in a region without overlapping any of the circuit blocks in the first member in a plan view; and
a conductive protrusion protruding from the second member on an opposite side to the first member.