US 12,243,833 B2
Semiconductor device with electromagnetic interference film and method of manufacture
Chi-Hsi Wu, Hsinchu (TW); Hsien-Wei Chen, Hsinchu (TW); Li-Hsien Huang, Zhubei (TW); and Tien-Chung Yang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 2, 2020, as Appl. No. 17/086,712.
Application 17/086,712 is a division of application No. 15/364,051, filed on Nov. 29, 2016, granted, now 10,825,780.
Prior Publication US 2021/0050305 A1, Feb. 18, 2021
Int. Cl. H01L 23/552 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01); H01L 23/538 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/31058 (2013.01); H01L 21/32051 (2013.01); H01L 21/32115 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
placing a plurality of semiconductor devices on a polymer layer, wherein each of the semiconductor devices comprises a semiconductor substrate and a conductive feature over the semiconductor substrate, wherein each conductive feature has an exposed sidewall that is coplanar with the respective semiconductor substrate;
depositing a continuous conductive film conformally over the polymer layer and over the plurality of semiconductor devices, wherein depositing the conductive film comprises depositing a conductive adhesive layer and depositing a conduction layer on the conductive adhesive layer, wherein the conductive adhesive layer and the conduction layer are electrically conductive, wherein the conductive adhesive layer physically and electrically contacts the exposed sidewall of the conductive feature of each semiconductor device of the plurality of semiconductor devices;
forming an encapsulant on the conductive film, wherein surfaces of the encapsulant, the conductive film, and the conductive features of the plurality of semiconductor devices are coplanar; and
forming a redistribution layer (RDL) covering and physically contacting the plurality of semiconductor devices and the encapsulant, wherein the RDL is electrically connected to the conductive features of the plurality of semiconductor devices.