US 12,243,832 B2
Method for manufacturing semiconductor device structure with overlay marks
Chun-Yen Wei, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 8, 2022, as Appl. No. 17/716,374.
Prior Publication US 2023/0326869 A1, Oct. 12, 2023
Int. Cl. H01L 23/544 (2006.01); G03F 1/42 (2012.01)
CPC H01L 23/544 (2013.01) [G03F 1/42 (2013.01); H01L 2223/54426 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device structure, comprising:
providing a substrate;
forming a first light-emitting feature disposed on the substrate, wherein the first light-emitting feature is utilized to emit a fluorescence with a first wavelength;
forming an overlay mark structure on the first light-emitting feature, wherein the overlay mark structure is configured to absorb or reflect the fluorescence emitted from the first light-emitting feature, wherein the overlay mark structure comprises a first pattern and a second pattern over the first pattern, wherein the first pattern has a first transmittance to the fluorescence of the first wavelength, the second pattern has a second transmittance to the fluorescence of the first wavelength, and the first transmittance is different from the second transmittance; and
forming a second light-emitting feature between the first pattern and the second pattern, wherein the second light-emitting feature comprises metal ions utilized to emit a fluorescence with a second wavelength different from the first wavelength.