US 12,243,826 B2
Method for manufacturing semiconductor structure having raised via contacts
Kuo-Chiang Tsai, Hsinchu (TW); Jyh-Huei Chen, Hsinchu (TW); and Jye-Yen Cheng, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 22, 2022, as Appl. No. 17/871,535.
Application 17/093,947 is a division of application No. 16/164,054, filed on Oct. 18, 2018, granted, now 10,840,189, issued on Nov. 17, 2020.
Application 17/871,535 is a continuation of application No. 17/093,947, filed on Nov. 10, 2020, granted, now 11,424,188.
Claims priority of provisional application 62/711,916, filed on Jul. 30, 2018.
Prior Publication US 2022/0367368 A1, Nov. 17, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/417 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/53257 (2013.01); H01L 29/4175 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
forming a first conductive structure over a substrate;
forming a second conductive structure through a dielectric layer over the first conductive structure;
partially removing the dielectric layer to reduce a thickness of the dielectric layer along a first direction; and
forming a third conductive structure over the second conductive structure, wherein a first portion of the third conductive structure is within a projection area of the second conductive structure along the first direction, and a second portion of the third conductive structure is outside the projection area of the second conductive structure along the first direction, and a first bottom surface of the first portion is spaced apart from a second bottom surface of the second portion by a distance along the first direction,
wherein a first sidewall of the second conductive structure and a second sidewall of the second conductive structure opposite to the first sidewall of the second conductive structure are both in contact with the third conductive structure in a second direction that is different from the first direction.