US 12,243,803 B2
Thermal interface material, method of manufacturing the same, and semiconductor packages including the same
Seunggeol Ryu, Seoul (KR); Seokkan Ki, Suwon-si (KR); Youngsuk Nam, Yongin-si (KR); Jaechoon Kim, Incheon (KR); Bangweon Lee, Yongin-si (KR); and Seungtae Hwang, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.; and UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 9, 2024, as Appl. No. 18/437,385.
Application 18/437,385 is a continuation of application No. 17/209,974, filed on Mar. 23, 2021, granted, now 11,935,812.
Claims priority of application No. 10-2020-0096919 (KR), filed on Aug. 3, 2020.
Prior Publication US 2024/0186215 A1, Jun. 6, 2024
Int. Cl. H01L 23/373 (2006.01); H01L 23/473 (2006.01)
CPC H01L 23/3736 (2013.01) [H01L 23/473 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a thermal interface material, comprising:
mixing fine particles with an acidic solution to remove a first oxide layer from a surface of each of the fine particles;
injecting a liquid metal into the acidic solution to remove a second oxide layer from a surface of the liquid metal, the fine particles from which the first oxide layer is removed in the acidic solution penetrating into the liquid metal from which the second oxide layer is removed; and
extracting the liquid metal including the fine particles therein from the acidic solution.