US 12,243,798 B2
Semiconductor device and method of fabricating the same
Jae-Min Jung, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 26, 2022, as Appl. No. 17/729,734.
Claims priority of application No. 10-2021-0123590 (KR), filed on Sep. 16, 2021.
Prior Publication US 2023/0080328 A1, Mar. 16, 2023
Int. Cl. H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/36 (2006.01)
CPC H01L 23/3675 (2013.01) [H01L 21/4882 (2013.01); H01L 23/3164 (2013.01); H01L 23/36 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a circuit substrate;
a semiconductor chip mounted on the circuit substrate; and
a thermal radiation film covering the semiconductor chip on the circuit substrate,
wherein the semiconductor chip includes:
first lateral surfaces that are opposite to each other in a first direction; and
second lateral surfaces that are opposite to each other in a second direction that intersects the first direction,
wherein a first width of the first lateral surfaces is less than a second width of the second lateral surfaces,
wherein the thermal radiation film covers a top surface of the semiconductor chip and covers the first lateral surfaces and the second lateral surfaces of the semiconductor chip, and
wherein the thermal radiation film has a plurality of slits that are directed toward the first lateral surfaces from ends of the thermal radiation film.