| CPC H01L 23/367 (2013.01) [H01L 23/3736 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01)] | 14 Claims |

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1. A method for manufacturing a semiconductor device, the method comprising:
providing a submount that has a first surface, a second surface located on a side opposite the first surface, and at least one lateral surface located between the first surface and the second surface, wherein the submount comprises:
a groove located at the second surface,
a heat dissipation portion located at the second surface,
at least one end face through channel located at the at least one lateral surface, and
an electrode pattern on the first surface;
physically joining the heat dissipation portion to a package substrate by a first joint material; and
after the step of physically joining the heat dissipation portion to the package substrate, disposing a second joint material inside the at least one end face through channel to electrically connect the electrode pattern and the package substrate; wherein:
the at least one lateral surface comprises a plurality of lateral surfaces including a first lateral surface, a second lateral surface opposite the first lateral surface, a third lateral surface extending between the first and second lateral surfaces, and a fourth lateral surface extending between the first and second lateral surfaces opposite the third lateral surface; and
the groove has a first overall end located at the first lateral surface and a second overall end located at the third lateral surface.
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