US 12,243,792 B2
Microelectronic structures including bridges
Omkar G. Karhade, Chandler, AZ (US); Xiaoxuan Sun, Phoenix, AZ (US); Nitin A. Deshpande, Chandler, AZ (US); and Sairam Agraharam, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 21, 2020, as Appl. No. 17/129,135.
Prior Publication US 2022/0199480 A1, Jun. 23, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC H01L 23/3192 (2013.01) [H01L 23/3185 (2013.01); H01L 23/5385 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 23/295 (2013.01); H01L 23/49822 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/32137 (2013.01); H01L 2224/32505 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic assembly, comprising:
a substrate having first conductive contacts and second conductive contacts at a face of the substrate;
a first microelectronic component having third conductive contacts and fourth conductive contacts at a face of the first microelectronic component, wherein the third conductive contacts are coupled to the first conductive contacts;
a second microelectronic component having fifth conductive contacts and sixth conductive contacts at a face of the second microelectronic component, wherein the fifth conductive contacts are coupled to the second conductive contacts; and
a bridge component having seventh conductive contacts and eighth conductive contacts at a face of the bridge component, wherein the fourth conductive contacts are coupled to the seventh conductive contacts, the sixth conductive contacts are coupled to the eighth conductive contacts, the seventh conductive contacts have a smaller pitch than the first conductive contacts, and the eighth conductive contacts have a smaller pitch than the second conductive contacts;
wherein:
the microelectronic assembly further includes a first dielectric material between the first microelectronic component and the second microelectronic component;
the first dielectric material has a first filler content weight-percentage greater than 80 weight-percent and less than 100 weight-percent;
the microelectronic assembly further includes a second dielectric material between the first microelectronic component and the second microelectronic component;
the second dielectric material is between the first dielectric material and the substrate; and
the second dielectric material has a second filler content weight-percentage that is less than the first filler content weight-percentage.