US 12,243,791 B2
Semiconductor package
Sunghawn Bae, Suwon-si (KR); Doohwan Lee, Suwon-si (KR); and Jooyoung Choi, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 20, 2022, as Appl. No. 17/749,825.
Application 17/749,825 is a continuation of application No. 16/672,652, filed on Nov. 4, 2019, granted, now 11,342,239.
Claims priority of application No. 10-2018-0137526 (KR), filed on Nov. 9, 2018.
Prior Publication US 2022/0278011 A1, Sep. 1, 2022
Int. Cl. H01L 23/36 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3135 (2013.01) [H01L 21/4846 (2013.01); H01L 23/367 (2013.01); H01L 23/3736 (2013.01); H01L 23/49827 (2013.01); H01L 24/25 (2013.01); H01L 2224/25171 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a metal layer on a carrier;
forming a conductor pattern layer on the metal layer;
mounting a semiconductor chip on a tape;
forming an encapsulant covering the semiconductor chip;
attaching the conductor pattern layer to the encapsulant;
removing the tape; and
forming a connection structure electrically connected to the semiconductor chip in an area from which the tape is removed,
wherein the metal layer comprises a metal plate having a substantially uniform thickness on the carrier,
the conductor pattern layer comprises a plurality of patterns spaced apart from each other on the metal layer, and
the encapsulant extends between the plurality of patterns and contacts the metal plate.