US 12,243,789 B2
Semiconductor device, semiconductor system, moving body, and method for manufacturing semiconductor device
Naoki Yoshimatsu, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/753,934
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Dec. 13, 2019, PCT No. PCT/JP2019/048964
§ 371(c)(1), (2) Date Mar. 18, 2022,
PCT Pub. No. WO2021/117227, PCT Pub. Date Jun. 17, 2021.
Prior Publication US 2022/0336302 A1, Oct. 20, 2022
Int. Cl. H01L 23/053 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H02P 29/024 (2016.01)
CPC H01L 23/053 (2013.01) [H01L 21/4817 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H02P 29/024 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a laminated body including a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer laminated, in which the first insulator layer is arranged between the first conductor layer and the second conductor layer and electrically insulates the first conductor layer from the second conductor layer, and the second insulator layer is arranged between the second conductor layer and the third conductor layer and electrically insulates the third conductor layer from the second conductor layer;
a semiconductor element mounted on the first conductor layer; and
a cooler connected to the third conductor layer; wherein
the first insulator layer has a planar shape smaller than a planar shape of the second insulator layer.