US 12,243,785 B2
Semiconductor device having work-function metal and method of forming the same
Juyoun Kim, Hwasung-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 29, 2024, as Appl. No. 18/425,390.
Application 15/468,631 is a division of application No. 14/972,704, filed on Dec. 17, 2015, granted, now 9,627,500, issued on Apr. 18, 2017.
Application 18/425,390 is a continuation of application No. 17/958,805, filed on Oct. 3, 2022, granted, now 11,929,289.
Application 17/958,805 is a continuation of application No. 17/335,174, filed on Jun. 1, 2021, granted, now 11,462,442, issued on Oct. 4, 2022.
Application 17/335,174 is a continuation of application No. 16/921,037, filed on Jul. 6, 2020, granted, now 11,043,430, issued on Jun. 22, 2021.
Application 16/921,037 is a continuation of application No. 16/459,889, filed on Jul. 2, 2019, granted, now 10,734,288, issued on Aug. 4, 2020.
Application 16/459,889 is a continuation of application No. 15/468,631, filed on Mar. 24, 2017, granted, now 10,388,574, issued on Aug. 20, 2019.
Claims priority of application No. 10-2015-0014418 (KR), filed on Jan. 29, 2015.
Prior Publication US 2024/0170340 A1, May 23, 2024
Int. Cl. H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823821 (2013.01) [H01L 21/28088 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/845 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a first area and a second area;
a first fin active area and a second fin active area in the first area on the substrate;
a third fin active area and a fourth fin active area in the second area on the substrate;
a first gate electrode crossing the first fin active area, the first gate electrode including,
a first layer on the first fin active area and including Ti and N,
a second layer on the first layer and including Ti and N,
a third layer on the second layer and including Ti, Al and C,
a fourth layer on the third layer and including Ti and N, and
a fifth layer on the fourth layer and including W,
a second gate electrode crossing the second fin active area, the second gate electrode including,
a sixth layer on the second fin active area and including Ti and N,
a seventh layer on the sixth layer and including Ti, Al and C,
a eighth layer on the seventh layer and including Ti and N, and
a ninth layer on the eighth layer and including W,
a third gate electrode crossing the third fin active area, the third gate electrode including,
a tenth layer on the third fin active area and including Ti and N,
a eleventh layer on the tenth layer and including Ti, and N,
a twelfth layer on the eleventh layer and including Ti, Al and C, and
a thirteenth layer on the twelfth layer and including Ti and N, and
a fourth gate electrode crossing the fourth fin active area, the fourth gate electrode including,
a fourteenth layer on the fourth fin active area and including Ti and N,
a fifteenth layer on the fourteenth layer and including Ti, Al and C,
a sixteenth layer on the fifteenth layer and including Ti and N, and
a seventeenth layer on the sixteenth layer and including W,
wherein a width of the ninth layer is greater than a width of the seventeenth layer, and
wherein a thickness of the fourth layer is greater than a thickness of the first layer.