US 12,243,783 B2
Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom
Hui-Lin Huang, Hsinchu (TW); Li-Li Su, Chubei (TW); Yee-Chia Yeo, Hsinchu (TW); and Chii-Horng Li, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 16, 2021, as Appl. No. 17/232,898.
Claims priority of provisional application 63/145,605, filed on Feb. 4, 2021.
Prior Publication US 2022/0246479 A1, Aug. 4, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/285 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/0259 (2013.01); H01L 21/0332 (2013.01); H01L 21/28518 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
etching a first recess adjacent a first dummy gate stack and a first fin;
etching a second recess adjacent a second dummy gate stack and a second fin;
epitaxially growing a first epitaxy layer of a first source/drain region in the first recess;
depositing a first metal-comprising mask to overlap the first dummy gate stack, overlap the second dummy gate stack, overlap the first epitaxy layer in the first recess, and overlap sidewalls and a bottom surface of the second recess;
patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy layer;
epitaxially growing a second epitaxy layer of the first source/drain region in the first recess and overlapping the first epitaxy layer of the first source/drain region while masking the sidewalls and the bottom surface of the second recess with remaining portions of the first metal-comprising mask; and
after epitaxially growing the second epitaxy layer, removing the remaining portions of the first metal-comprising mask from the second recess, wherein epitaxially growing the second epitaxy layer comprises flowing a hydrogen-comprising precursor in the first recess and over the first metal-comprising mask, and wherein removing the remaining portions of the first metal-comprising mask comprises removing precursor residue of the hydrogen-comprising precursor with the remaining portions of the first metal-comprising mask.