US 12,243,781 B2
Semiconductor device with L-shape conductive feature and methods of forming the same
Cheng-Chi Chuang, New Taipei (TW); Li-Zhen Yu, Hsinchu (TW); Yi-Hsun Chiu, Hsinchu County (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACUTRING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/874,267.
Application 17/874,267 is a division of application No. 16/935,830, filed on Jul. 22, 2020, granted, now 11,664,278.
Prior Publication US 2022/0359303 A1, Nov. 10, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/76816 (2013.01); H01L 21/823437 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin structure disposed on a substrate;
a gate structure disposed on the fin structure;
a source/drain feature disposed on the fin structure, the source/drain feature associated with the gate structure;
a first interlayer dielectric layer disposed over the source/drain feature;
an L-shaped conductive feature disposed directly on a top surface of the gate structure and extending over the source/drain feature, wherein the L-shaped conductive feature is isolated from the source/drain feature by the first interlayer dielectric layer; and
a first dielectric feature disposed directly on the L-shaped conductive feature.