US 12,243,780 B2
Semiconductor device structure and method for forming the same
Ching-Wei Tsai, Hsinchu (TW); Yu-Xuan Huang, Hsinchu (TW); Kuan-Lun Cheng, Hsin-chu (TW); Chih-Hao Wang, Baoshan Township Hsinchu County (TW); Min Cao, Hsinchu (TW); Jung-Hung Chang, Changhua County (TW); Lo-Heng Chang, Hsinchu (TW); Pei-Hsun Wang, Kaohsiung (TW); and Kuo-Cheng Chiang, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 13, 2021, as Appl. No. 17/473,486.
Application 17/473,486 is a division of application No. 16/586,523, filed on Sep. 27, 2019, granted, now 11,121,037.
Prior Publication US 2021/0407858 A1, Dec. 30, 2021
Int. Cl. H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01); H01L 21/02603 (2013.01); H01L 27/0922 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a multilayer structure over a substrate having a base;
forming a gate stack over the substrate, wherein the gate stack wraps around the multilayer structure;
partially removing the multilayer structure, which is not covered by the gate stack, wherein the multilayer structure remaining under the gate stack forms a multilayer stack, and the multilayer stack comprises a first sacrificial layer and a first channel layer over the first sacrificial layer;
partially removing the first sacrificial layer to form a first recess in the multilayer stack;
forming an inner spacer layer in the first recess and a bottom spacer over a first sidewall of the first channel layer, wherein the inner spacer layer and the bottom spacer are made of different materials; and
forming a source/drain structure over the bottom spacer, wherein the bottom spacer separates the source/drain structure from the first channel layer, and the source/drain structure partially extends into the bottom spacer.