US 12,243,774 B2
Impurity removal in doped ALD tantalum nitride
Rui Li, San Jose, CA (US); Xiangjin Xie, Fremont, CA (US); Tae Hong Ha, San Jose, CA (US); Xianmin Tang, San Jose, CA (US); and Lu Chen, Cupertino, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 29, 2022, as Appl. No. 17/853,150.
Application 17/853,150 is a continuation of application No. 16/914,416, filed on Jun. 28, 2020, granted, now 11,410,881.
Prior Publication US 2022/0328348 A1, Oct. 13, 2022
Int. Cl. H01L 21/44 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76862 (2013.01) [C23C 16/34 (2013.01); C23C 16/45544 (2013.01); H01L 21/76843 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A processing method comprising:
forming a doped tantalum nitride layer on a substrate, the doped tantalum nitride layer having a first amount of dopant comprising one or more of ruthenium, tungsten or cobalt, the substrate having a surface with a structure formed therein, the structure extending a distance into the substrate and having sidewalls and a bottom;
exposing the doped tantalum nitride layer to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a resistivity less than 600 μΩ-cm and a second amount of dopant less than the first amount of dopant; and
depositing a metal film on the treated doped tantalum nitride layer to fill the structure.