US 12,243,772 B2
Protection structures for bonded wafers
Ssu-Chiang Weng, New Taipei (TW); Ping-Hao Lin, Tainan (TW); and Fu-Cheng Chang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/356,843.
Application 17/238,496 is a division of application No. 16/399,066, filed on Apr. 30, 2019, granted, now 11,004,733, issued on May 11, 2021.
Application 18/356,843 is a continuation of application No. 17/238,496, filed on Apr. 23, 2021, granted, now 11,791,205.
Claims priority of provisional application 62/692,007, filed on Jun. 29, 2018.
Prior Publication US 2024/0021469 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01)
CPC H01L 21/76832 (2013.01) [H01L 21/31116 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 25/0657 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a first die comprising:
a first semiconductor substrate;
a plurality of dielectric layers underlying the first semiconductor substrate;
a plurality of metal rings, each in one of the plurality of dielectric layers; and
a first surface dielectric layer underlying the plurality of metal rings and the plurality of dielectric layers;
a second die comprising:
a second semiconductor substrate;
a metal pad over the second semiconductor substrate;
a second surface dielectric layer overlying the metal pad, wherein the first surface dielectric layer is bonded to the second surface dielectric layer;
a conductive plug penetrating through the first die to contact a top surface of the metal pad; and
a first dielectric protection layer encircling and contacting the conductive plug, wherein the first dielectric protection layer is underlying the plurality of metal rings.