US 12,243,769 B2
Method for preparing semiconductor device structure using nitrogen-containing pattern
Cheng-Hsiang Fan, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 3, 2022, as Appl. No. 17/735,284.
Prior Publication US 2023/0360957 A1, Nov. 9, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/308 (2013.01); H01L 21/31053 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for preparing a semiconductor device structure, comprising:
forming a nitrogen-containing pattern over a semiconductor substrate;
performing an energy treating process to form a transformed portion in the semiconductor substrate and covered by the nitrogen-containing pattern, wherein a portion of the semiconductor substrate covered by the nitrogen-containing pattern is transformed into the transformed portion while another portion of the semiconductor substrate exposed by the nitrogen-containing pattern remains intact during the energy treating process;
etching the semiconductor substrate such that the transformed portion is surrounded by an opening structure; and
removing the nitrogen-containing pattern after the energy treating process is performed, wherein the nitrogen-containing pattern is removed before the semiconductor substrate is etched.