US 12,243,754 B2
Semiconductor device and a method of manufacturing the semiconductor device
Do Young Choi, Hwaseong-si (KR); Sung Min Kim, Incheon (KR); Cheol Kim, Hwaseong-si (KR); Hyo Jin Kim, Seoul (KR); Dae Won Ha, Seoul (KR); and Dong Woo Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 2, 2021, as Appl. No. 17/517,304.
Claims priority of application No. 10-2021-0017676 (KR), filed on Feb. 8, 2021.
Prior Publication US 2022/0254650 A1, Aug. 11, 2022
Int. Cl. H01L 21/3213 (2006.01); H01L 21/308 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/32139 (2013.01) [H01L 21/3086 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first active pattern extending in a first direction on a substrate;
a second active pattern which extends in the first direction and is spaced apart from the first active pattern in a second direction different from the first direction;
a third active pattern which extends in the first direction and is spaced apart from the first active pattern in the second direction, the first active pattern being interposed between the second active pattern and the third active pattern;
a field insulating film placed between the first active pattern and the second active pattern and between the first active pattern and the third active pattern;
a first gate structure which crosses the first active pattern and the third active pattern, extends in the second direction, and includes a first gate electrode and a first gate insulating film, the first gate insulating film interposed between the first active pattern and the first gate electrode and between the third active pattern and the first gate electrode;
a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate insulating film, the second gate insulating film interposed between the second active pattern and the second gate electrode;
a first gate separation structure placed on an upper surface of the field insulating film between the first gate structure and the second gate structure, the first gate separation structure including a first dam structure and a gate separation filling film which is at least partially placed on an upper surface of the first dam structure; and
a second dam structure placed on an upper surface of the field insulating film between the first active pattern and the third active pattern,
wherein the first gate insulating film extends along a side wall and an upper surface of the second dam structure, and
wherein the second gate insulating film extends along a side wall of the first dam structure and does not extend along a side wall of the gate separation filling film.