US 12,243,753 B2
Method and apparatus for selective film formation in semiconductor substrate processing
Kimihiko Nakatani, Toyama (JP); and Yoshitomo Hashimoto, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Sep. 14, 2021, as Appl. No. 17/474,705.
Claims priority of application No. 2020-157656 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0093388 A1, Mar. 24, 2022
Int. Cl. H01L 21/32 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/32 (2013.01) [C23C 16/045 (2013.01); C23C 16/345 (2013.01); H01L 21/0228 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of the substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate;
(b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and
(c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate,
wherein the base film is made of a first material and the film is made of a second material that is different from the first material.