US 12,243,750 B2
Gas curtain for semiconductor manufacturing system
Kent Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,369.
Application 17/459,369 is a division of application No. 16/600,054, filed on Oct. 11, 2019, granted, now 11,145,517.
Claims priority of provisional application 62/752,221, filed on Oct. 29, 2018.
Prior Publication US 2021/0391179 A1, Dec. 16, 2021
Int. Cl. H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/3065 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01J 37/32788 (2013.01); H01L 21/31116 (2013.01); H01L 21/67126 (2013.01); H01L 21/0262 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a processing chamber;
a slit valve configured to provide access to the processing chamber;
a chuck disposed in the processing chamber and configured to hold as substrate; and
a gas curtain device disposed between the chuck and the slit valve and configured to form a directional inert gas stream flowing towards the slit valve, wherein a ratio of a distance between the slit valve and the gas curtain device and a distance between the slit valve and a rear sidewall of the processing chamber is between about 0.02 and about 1.